PURPOSE: To prevent the formation of defective patterns due to resist dust by completely removing the photoresist film from a pixel region at a photoresist film removing step.

CONSTITUTION: A photoresist film 36 is formed on the entire surface of a CCD element substrate 34, including a pixel region 30 and a driving transistor region 32. Using a reticle so patterned that there will be no photoresist film remaining, the entire substrate 34, including the pixel region 30, is subjected to demagnifying projection exposure. Then development is performed to completely remove the photoresist film 36 from the pixel region 30 without leaving the striped photoresist film on electrodes 38. Thus the patterned pixel region 30 is obtained, and further the photoresist film in a specified pattern is obtained in the driving transistor region 32. Since the thus obtained pixel region 30 has no remaining resist dust, the formation of defective patterns due to dust is prevented.