PHASE SHIFT MASK AND MEASURING METHOD OF PHASE DIFFERENCE

Japanese Patent JPH08114909

A

PURPOSE: To provide a phase shift mask having a deep focal depth with which a stable pattern of a photosensitive resin having a more perpendicular cross section of the pattern can be formed, and to provide a measuring method of phase difference by which the phase difference in a practical fine pattern can be measured even in a halftone phase shift mask.

CONSTITUTION: This phase shift mask is obtd. by partly forming a translucent film 2 on a transparent substrate 1 so that the mask has a pattern having a transparent area 3 where light transmits only through the transparent substrate 1 and a translucent area 4 where light transmits through the transparent substrate 1 and the translucent film 2. The phase difference between the light transmitting through the transparent area 3 and the light transmitting through the translucent area 4 is specified to the range of 185 ±4°. Thereby, a pattern having a perpendicular cross section can be formed as an aperture in a photosensitive resin. The phase difference may be specified to the range from 150 to 179°.

JP2002509612	[Title of Invention] Wavelength measurement system
JPH0961527	APPARATUS FOR MEASURING CORRELATION OF ELECTRON

YASUSATO TADAO
ISHIDA SHINJI
IWABUCHI YOKO

JP24910894A

May 07, 1996

October 14, 1994

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NEC CORP

G01J9/00; G01M11/00; G03F1/32; G03F1/68; H01L21/027; (IPC1-7): G03F1/08; G01J9/00; G01M11/00; H01L21/027

JPH063803A	1994-01-14
JPH05142751A	1993-06-11
JPH04190352A	1992-07-08
JPH04230752A	1992-08-19
JPH05265186A	1993-10-15

Matsuura

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