PURPOSE: To improve the sensitivity of a photodiode and to process the signal in a front stage with an electronic element in a rear stage positively by providing a multilayered reflecting film on a compound semiconductor substrate, and forming a surface-incident-type photodiode and then the electronic element thereon.

CONSTITUTION: A semi-insulating InP substrate 1 is machined in the step difference shape. Under the stated where a mask is applied on the upper stage of the step difference, an InGaAs/InAlAs multilayered reflecting film 2 is grown at the lower stage so as to fill the step difference. Then, a non-doped InGaAs light receiving layer, which is to become the light receiving layer of a photodiode, and an Si-doped N-type InGaAs layer 4, which is to become the active layer of MESFET, are sequentially formed in multilayer on the entire surface. Thereafter,under the state, wherein the MESFET part is masked, the Si-doped N-type InGaAs layer 4 at the photodiode part is etched off. A non-doped InAlAs gap layer 5 is grown thereon. Thus, the sensitivity of the photodiode in the front stage is improved.