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Title:
PHOSPHOR AND PRODUCTION OF PHOSPHOR
Document Type and Number:
Japanese Patent JP3829464
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a powdery GaN phosphor and a process for producing the same.
SOLUTION: The phosphor production apparatus 10 consists of a vacuum container 1, an inlet tube 3 for a material gas, a container 4 for particles, a lamp 6 for heating, and an agitator 7 which vibrates the container 4. The material gas used is TMGa (trimethylgallium), ammonia gas (NH3), DMZn (dimethylzinc), or SiH4 (silane). The particles (powder) used are AlN having a mean particle diameter of 1 μm. The temperature is raised to 1,020°C by heating with the lamp to grow a semiconductor film on each particle. The GaN:Zn and Si formed on the surface of each AlN particle is annealed at 700°C in nitrogen to obtain the phosphor. When its PL is observed, a blue emission can be obtained. Further, for estimation, this is applied to the anode base of a VFD (fluorescent indicating tube) and is allowed to emit light under an anode voltage of 30 V, whereupon a blue emission can be obtained and its luminance is about 500 cd/m2.


Inventors:
Shigeo Ito
Toki Hitoshi
Application Number:
JP7782398A
Publication Date:
October 04, 2006
Filing Date:
March 25, 1998
Export Citation:
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Assignee:
Futaba Electronics Co., Ltd.
International Classes:
C09K11/08; C09K11/62; C09K11/70; (IPC1-7): C09K11/08; C09K11/62
Domestic Patent References:
JP9286982A
JP9235548A
JP9241632A
JP2257679A
JP10074980A
JP10075008A
JP7081935A
Attorney, Agent or Firm:
Norimitsu Nishimura