Title:
ホスホシリケートゲル、プロトン伝導性材料およびその製造方法
Document Type and Number:
Japanese Patent JP3998945
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a proton conductive material or membrane excellent in proton conductivity and less in its deterioration even under a high temperature or high humidity condition, and also provide its production method. SOLUTION: The proton conductive material comprises a phosphosilicate gel which is produced by adding an aluminum compound and/or boron compound and phosphoric acid to a contactant of the water containing an acidic condensation catalyst and a silane compound containing a tetraalkoxysilane and an alkyltrialkoxysilane, mixing them to form a sol, gelling the obtained sol, and then heat treating.
Inventors:
Tsutomu Minami
Masahiro Tatsumi sand
Tadaga Seiji
Atsushi Matsuda
Masahiro Tatsumi sand
Tadaga Seiji
Atsushi Matsuda
Application Number:
JP2001329216A
Publication Date:
October 31, 2007
Filing Date:
October 26, 2001
Export Citation:
Assignee:
Tsutomu Minami
JSR CORPORATION
JSR CORPORATION
International Classes:
C01B33/12; C08G77/02; C08G79/08; C08G79/10; H01B1/06; H01M8/02; H01M8/10
Domestic Patent References:
| JP10069817A | ||||
| JP2000272932A | ||||
| JP2000256007A |
Other References:
勘崎廷夫他,リン酸や硫酸を添加した多孔質シリカゲルの細孔構造とプロトン伝導性,日本セラミックス協会 2000年年会講演予稿集,2000年 3月,p.41
忠永清治他,γ-グリシドキシプロピルトリメトキシシラン-オルトリン酸から作製した無機-有機複合体膜のプロトン伝導性,日本化学会第79春季年会-講演予稿集I,2001年 3月,p.342
KANZAKI, T. et al.,Preparation of Proton Conductive Phosphosilicate Gels Derived from 2-(Diethoxyphosphoryl)ethyltriethoxysilane,Chem. Lett.,2000年11月,No. 11,p. 1314-1315
忠永清治他,γ-グリシドキシプロピルトリメトキシシラン-オルトリン酸から作製した無機-有機複合体膜のプロトン伝導性,日本化学会第79春季年会-講演予稿集I,2001年 3月,p.342
KANZAKI, T. et al.,Preparation of Proton Conductive Phosphosilicate Gels Derived from 2-(Diethoxyphosphoryl)ethyltriethoxysilane,Chem. Lett.,2000年11月,No. 11,p. 1314-1315
Attorney, Agent or Firm:
Shunichiro Suzuki
Koji Makimura
Chihata Takahata
Toru Suzuki
Koji Makimura
Chihata Takahata
Toru Suzuki