PURPOSE: To obtain close contactness between substrate and electrode and facilitates patterning by forming metal electrode films where Ti film and Al film are sequentially laminated on an insulated substrate into a pattern where such electrodes are arranged in a line.

CONSTITUTION: A metal electrode 2 is patterned into prescribed shape by directly depositing Ti film 3 on insulated substrate 1 such as alumina and then depositing Al film 4 thereon. In this patterning, the electrodes A of metal electrodes 2 are arranged in a link by photo etching of Al film 4 with acetic acid and then etching Ti film 3 with fluoric acid of 5% concentration which does not corrode the Al film 4. Next, a thin film of amorphous silicon is formed on the metal electrode 2 as a photo conductive material 5 by the plasma CVD method, while a thin film of IOT as a transparent electrode 6 by the vacuum deposition method.