To suppress misfit dislocation occurring from lattice mismatching, by forming a ZnO film on a silicon substrate and forming a light emitting layer on the ZnO film.

A ZnO film 2 is formed on a silicon substrate 1. This ZnO film 2 is an axial orientation polycrystalline film and functions as a buffer layer for forming a GaN layer 3. After the ZnO film 2 is formed, a GaN layer 3 as a light emitting layer is formed thereon. In the method for forming the GaN layer 3, nitrogen gas in plasma state is formed by generating electron cyclotron resonance(ECR) phenomenon using an ECR-MBE apparatus having a plasma forming region and a film forming region. This nitrogen gas in plasma state is fed into the film forming region and is reacted with metal Ga supplied from Knudsen cell provided also in the film forming region to form the GaN layer 3 on the substrate. The lattice constant difference between the ZnO film 2 and the GaN is as small as about 2%, so that the misfit dislocation occurring from lattice mismatching can be suppressed.