Title:
PHOTO SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS5429988
Kind Code:
A
Abstract:
PURPOSE: To obtain a highly-efficient and long-life luminous elements and low-loss and stable photo waveguide paths on GaAs by using mixed crystals of one of InP, GaAs, AlAs, GaP, and AlP and both GaAs and AlSB.
Inventors:
MATSUSHITA SHIGEO
KOBAYASHI ISAO
KOBAYASHI ISAO
Application Number:
JP9623677A
Publication Date:
March 06, 1979
Filing Date:
August 10, 1977
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G02B6/12; H01L27/15; H01L33/08; H01L33/30; H01L33/48; H01S5/00; (IPC1-7): G02B5/14; H01L27/15; H01S3/18