Title:
光酸発生剤、化学増幅レジスト材料及びパターン形成方法
Document Type and Number:
Japanese Patent JP4226842
Kind Code:
B2
Abstract:
A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer
Inventors:
Tomohiro Kobayashi
Satoshi Watanabe
Tsunehiro Nishi
Yoichi Osawa
Katsuhiro Kobayashi
Satoshi Watanabe
Tsunehiro Nishi
Yoichi Osawa
Katsuhiro Kobayashi
Application Number:
JP2002129559A
Publication Date:
February 18, 2009
Filing Date:
May 01, 2002
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C07D327/06; G03F7/004; G03F7/039; G03F7/075
Foreign References:
| GB2102421A | ||||
| GB2107510A |
Other References:
Chemical Abstracts,1971,vol.74,p264,12542u
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
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