Title:
光検出素子および赤外線検出装置
Document Type and Number:
Japanese Patent JP7103409
Kind Code:
B2
Abstract:
A photodetection element that includes: a substrate with a high infrared transmittance in a desired wavelength region; an electron barrier layer of a type-I superlattice structure, the electron barrier layer being formed above the substrate and lattice-matched to the substrate; and a light-receiving layer of a type-II superlattice structure, formed in contact with the electron barrier layer.
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Inventors:
Yuichi Igarashi
Application Number:
JP2020517726A
Publication Date:
July 20, 2022
Filing Date:
May 11, 2018
Export Citation:
Assignee:
NEC
International Classes:
H01L31/10
Domestic Patent References:
| JP2013251341A | ||||
| JP2012146806A |
Foreign References:
| US20100072514 |
Other References:
HADDADI, A. et al.,Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier,Applied Physics Letters,Vol.110,pp.101104-1 - 101104-4
三浦 広平 ほか,InP基板上InAs/GaSb超格子を用いた中赤外センサ,SEIテクニカルレビュー,住友電工,2014年,2014年1月号 No.184,pp.55-60
三浦 広平 ほか,InP基板上InAs/GaSb超格子を用いた中赤外センサ,SEIテクニカルレビュー,住友電工,2014年,2014年1月号 No.184,pp.55-60
Attorney, Agent or Firm:
Desk
Keiji Kitajima
Keiji Kitajima
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