Title:
PHOTODIODE
Document Type and Number:
Japanese Patent JPH03290979
Kind Code:
A
Abstract:
PURPOSE:To restrain a leak current small, to realize good flexibility of a common terminal and to improve sensitivity of a long wave length band by forming a photoelectric transfer part of a P-N junction between a P<+>-buried layer and an N-epitaxial layer. CONSTITUTION:An N-epitaxial layer 22 is formed on a P-substrate 21, and a P<+>-isolationl layer 27 is selectively formed from a surface of the layer 22 to a surface of the substrate 21. An N<+>-buried layer 28 is formed between the layer 22 and the substrate 21 enclosed with the layer 27, and a P<+>-buried layer 30 is formed between the layer 28 and the layer 22 independently from the substrate 21. An N<+>-diffusion layer 24 is selectively formed on a surface of the layer 22 enclosed with the layer 27, and a P<+>-diffusion layer 23 is formed from a part of a surface thereof to a part of a surface of the layer 30. An anode electrode 25 and a cathode electrode 26 are formed on the layer 23 and the layer 24, and photoelectric transfer part is formed of a P-N junction between the layer 30 and the layer 22. Therefore, it is possible to restrain a leak current small, to improve sensitivity of a long wavelength band of light and to improve flexibility of a common terminal.
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Inventors:
TAKAHARA SEIJI
Application Number:
JP9263390A
Publication Date:
December 20, 1991
Filing Date:
April 06, 1990
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)
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