PURPOSE: To reduce the elution of a semiconductor film into an electrolyte and extend a life by containing a transition metal complex which has the elec tron donating property and can be set to the mixed valence state in an electro lyte.

CONSTITUTION: A transition metal complex which has the electron donating property and can be set to the mixed valence state is contained in an electrolyte. The transition metal complex indicated by general formulas (I), (II), (III) is preferable for the metal complex. When light is radiated to the semiconductor film of a photoelectric conversion body using this electrolyte, charge separation occurs on the interface between the semiconductor film and the electrolyte, and separated electrons are implanted into the first electrode to generate a current. Holes are generated in the semiconductor by charge separation, electrons are implanted into the semiconductor if the above transition metal complex having the electron donating property exists at this time, and the electrons are connected to the above holes. The unstableness of the semiconduc tor due to the generation of the holes does not occur, and the elution of the semiconductor into the electrolyte can be suppressed.