Title:
PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
Japanese Patent JPS5679477
Kind Code:
A
Abstract:
PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via a silicon nitride film, thereby differentiating a work function or a conductive type. CONSTITUTION:An Si3N4 or Si3N4-X film 6 is set on a dope or non-dope Si substrate 1 and then a positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP3728580A
Publication Date:
June 30, 1981
Filing Date:
March 24, 1980
Export Citation:
Assignee:
YAMAZAKI SHUNPEI
International Classes:
H01L31/04; H01L31/0224; H01L31/06; H01L31/062; (IPC1-7): H01L31/04