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Title:
PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3945037
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a photoelectric conversion device that can be kept high in material duty factor, is excellent in emission brightness, and small in thickness and size by a method wherein a wire is bonded between an optical element and one of a pair of electrodes, and an insulating reflecting layer is formed on the base of a resin package between the electrodes.
SOLUTION: A semiconductor light emitting element 4 is mounted on an electrode 1 in a dimple 21a, and a wire 5 is bonded between the element 4 and an electrode 2 provided in a dimple 21b. The semiconductor light emitting element 4 is equipped with an N front electrode 4a that is formed on its top surface and where one end of the wire 5 is bonded, and the other end of the wire 5 is bonded to the electrode 2 in the other dimple 21b. A reflecting layer 3 is formed on the surface of a manufacturing board 21 between the dimples 21a and 21b, and the reflecting layer 3 is formed by applying white resist on the surface. A resin layer is provided to the surface of the manufacturing board 21 keeping uniform in thickness so as to seal up all the semiconductor light emitting element 4 and the wire 5 with it into a package.


Inventors:
Tadaaki Ikeda
Application Number:
JP25074498A
Publication Date:
July 18, 2007
Filing Date:
September 04, 1998
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L33/30; H01L33/44; H01L33/56; H01L33/60; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
JP2000049383A
JP7235696A
JP9181359A
JP8125227A
JP11345917A
JP2000058924A
JP5063239A
JP4087667U
JP5315654A
Attorney, Agent or Firm:
Fumio Iwahashi
Hiroki Naito
Daisuke Nagano