Title:
光電変換素子および光電変換素子の製造方法
Document Type and Number:
Japanese Patent JP6764187
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a novel technique for realizing n-type or i-type cuprous oxide.SOLUTION: A photoelectric conversion device 10 includes a sheet-like p-type semiconductor substrate 12 composed of poly crystal Cu2O (cuprous oxide) added with Na (natrium) as a metal element, a p-type Cu2O thin film 14 formed on one side of the p-type semiconductor substrate, as an epitaxial layer, a transparent conductive layer 16 formed on the p-type Cu2O thin film, and a back electrode 18 composed of Au (gold) and formed on the opposite side of the p-type semiconductor substrate to the side where the p-type Cu2O thin film is formed.SELECTED DRAWING: Figure 1
Inventors:
Minamiuchitsugu
Toshihiro Miyata
Toshihiro Miyata
Application Number:
JP2016180711A
Publication Date:
September 30, 2020
Filing Date:
September 15, 2016
Export Citation:
Assignee:
Kanazawa Institute of Technology
International Classes:
H01L31/068; C01G3/00; H01L31/075; H01L31/18
Domestic Patent References:
| JP2006124754A | ||||
| JP8264794A | ||||
| JP2015162650A | ||||
| JP2005239526A | ||||
| JP2014183244A | ||||
| JP2007019460A | ||||
| JP5082813A |
Foreign References:
| WO2009008419A1 | ||||
| US20090072231 | ||||
| CN202373597U |
Other References:
L. Wang et al.,P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition,2008 33rd IEEE Photovoltaic Specialists Conference,米国,2009年 5月12日,URL,https://ieeexplore.ieee.org/document/4922869
Attorney, Agent or Firm:
Sakaki Morishita