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Patent Searching and Data


Title:
光電変換素子
Document Type and Number:
Japanese Patent JP7075605
Kind Code:
B2
Abstract:
Provided is a photoelectric conversion element that is capable of selectively reflecting light as a result of the structure of the photoelectric conversion element itself. The photoelectric conversion element uses a semiconductor for converting light into electric power via the photovoltaic effect and is provided with: a semiconductor layer which comprises a semiconductor; a front side metal layer which is a metal layer formed on the surface of the semiconductor layer; and a rear side metal layer which is a metal layer formed on the rear surface of the semiconductor layer, wherein the front side metal layer, the semiconductor layer, and the rear side metal layer form a resonator having an MSM structure.

Inventors:
Katsugo Hanamura
Isobe Kazuma
Tomohiro Uno
Shinji Tokumaru
Takayuki Kobayashi
Application Number:
JP2020503656A
Publication Date:
May 26, 2022
Filing Date:
March 01, 2019
Export Citation:
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Assignee:
National University Corporation Tokyo Institute of Technology
Nippon Steel Corporation
International Classes:
H01L31/054
Domestic Patent References:
JP2012514322A
JP2008300626A
JP2006501638A
Foreign References:
US5227648
Other References:
SCRANTON, G. et al.,Highly Efficient Thermophotovoltaics Enabled by Photon Re-Use,IEEE 43rd PHOTOVOLTAIC SPECIALISTS CONFERENCE,2016年11月21日,pp.1026-1029
WALKER, A. W. et al.,Impact of Photon Recycling on GaAs Solar Cell Designs,IEEE JOURNAL OF PHOTOVOLTAICS,2015年11月,Vol.5,pp.1636-1645
JURCZAK, P. et al.,Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations,OPTICS EXPRESS,2015年08月27日,Vol.23,pp.A1208-A1219
Attorney, Agent or Firm:
Patent Service Corporation Taiyo International Patent Office