Title:
光電変換層積層型固体撮像素子及び撮像装置
Document Type and Number:
Japanese Patent JP4887452
Kind Code:
B2
Abstract:
A photoelectric conversion layer stack-type solid-state imaging device includes a semiconductor substrate, a photoelectric conversion portion, a conductive light shield film, and a dielectric layer. A signal reading portion is formed on a semiconductor substrate. The photoelectric conversion portion is stacked above a light incidence side of the semiconductor substrate and includes a photoelectric conversion layer formed between a first electrode film and a second electrode film which is divided into a plurality of regions corresponding to pixels respectively. The conductive light shield film is stacked above the light incidence side of the photoelectric conversion portion outside an effective pixel region. The dielectric layer is disposed between the conductive light shield and the first electrode film. A given voltage is applied to the first electrode film through a lowpass filter formed by a resistance of wiring to the first electrode film and a capacitor formed between the conductive light shield film and the first electrode film.
Inventors:
Takuya Takada
Application Number:
JP2010258399A
Publication Date:
February 29, 2012
Filing Date:
November 18, 2010
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L27/146; H04N5/369
Domestic Patent References:
| JP2094566A | ||||
| JP2009267169A | ||||
| JP2009244414A | ||||
| JP2006156801A | ||||
| JP5251705A | ||||
| JP6310699A | ||||
| JP8250694A | ||||
| JP2006228938A | ||||
| JP10112533A |
Attorney, Agent or Firm:
Takeshi Takamatsu
Kiyozumi Yazawa
Toshiyuki Ozawa
Kimura Shinya
Kiyozumi Yazawa
Toshiyuki Ozawa
Kimura Shinya