Title:
PHOTOELECTRIC CONVERSION SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59107580
Kind Code:
A
Abstract:
PURPOSE:To obtain the device of high conversion efficiency by effectively utilizing reflected light by setting up an amorphous semiconductor for generating photovoltage with a P-N junction on a light-transmitting substrate through a first electrode consisting of a light-transmitting conductive film and forming a second electrode consisting of a light-transmitting conductive film, thickness thereof is prescribed, and a metallic film for reflection made of Al, to which Si is added, on the amorphous semiconductor. CONSTITUTION:The light-transmitting conductive film mainly comprising tin oxide is applied onto the light-transmitting substrate 1 made of glass, etc. and used as the first electrode 2, and the amorphous semiconductor consisting of a P type, an I type and an N type is formed onto the first electrode and used as a P-I-N layer 3. The light-transmitting conductive film 5 in 700-2,000Angstrom thickness and the Al film 6 to which Si is added are laminated and applied onto the layer 3, and used as the second electrode. Accordingly, the film 6 of excellent reflection characteristics is formed additionally besides the film 5, the reflected beams 10' of beams 10 projected to the exposed surface of the substrate 1 are increased, and conversion efficiency is improved.
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Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP21757182A
Publication Date:
June 21, 1984
Filing Date:
December 11, 1982
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L31/052; H01L31/056; H01L31/075; H01L31/077; (IPC1-7): H01L31/10
Domestic Patent References:
| JPS4841070A | 1973-06-16 | |||
| JPS499590A | 1974-01-28 | |||
| JPS55108780A | 1980-08-21 |
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