Title:
光電半導体構成素子
Document Type and Number:
Japanese Patent JP3539977
Kind Code:
B2
Abstract:
An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.
Inventors:
Frank fisher
Gunther Roischer
Thomas Ritz
Gottfried Landwehr
Gunther Roischer
Thomas Ritz
Gottfried Landwehr
Application Number:
JP50125899A
Publication Date:
July 07, 2004
Filing Date:
May 22, 1998
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
H01S5/10; H01S5/183; H01S5/323; (IPC1-7): H01S5/323; H01S5/183
Domestic Patent References:
| JP8213702A | ||||
| JP8236857A | ||||
| JP5041534A | ||||
| JP6140721A | ||||
| JP3191579A |
Other References:
SUGG A R ET AL,APPLIED PHYSICS LETTERS,1993年 5月17日,62/20,2510-2512
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Reinhard Einsel