Title:
PHOTOELECTRIC TRANSDUCER
Document Type and Number:
Japanese Patent JP2717077
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain frequency characteristics with an improved SNR by applying a light signal to an active region and providing a hetero junction bipolar transistor where an electrode is in a size closer to each application spot diameter and which is arranged in combteeth shape and a band-limiting circuit and a DC bias supply circuit at the input electrode side.
SOLUTION: The space between electrodes is proper, namely at least 0.1μm, the widths of an emitter electrode metal 24, base electrode metals 23a and 23b, collector electrodes 22a and 22b of a heterodyne junction bipolar transistor(HBT) are equal to or less than several μm, the length is 20μm or less for forming a stripe shape, and each electrode is arranged in a combteeth shape to a size closer to the diameter of a light application slit 27 which is applied from an optical means 15. Also, a band-limiting circuit 17 consisting of a resistor, a transmission circuit, and a parallel stub is provided at an input side and the band characteristics at 3db of the frequency response of HBT 16 can be maximized to cut-off characteristics by properly setting a DC bias point.
Inventors:
Eiji Suematsu
Nobuaki Imai
Nobuaki Imai
Application Number:
JP22414895A
Publication Date:
February 18, 1998
Filing Date:
August 31, 1995
Export Citation:
Assignee:
Sharp Corporation
ATR Optical and Radio Communications Research Institute, Inc.
ATR Optical and Radio Communications Research Institute, Inc.
International Classes:
H01L27/146; H01L21/8222; H01L27/06; H01L31/10; H04B10/2507; H04B10/40; H04B10/50; H04B10/516; H04B10/54; H04B10/588; H04B10/60; H04B10/61; (IPC1-7): H01L31/10
Domestic Patent References:
| JP63202975A | ||||
| JP62219675A | ||||
| JP5160184A |
Attorney, Agent or Firm:
Shusaku Yamamoto
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