PHOTOLITHOGRAPHY OF SILICON NITRIDE FILM

Title:

PHOTOLITHOGRAPHY OF SILICON NITRIDE FILM

Document Type and Number:

Japanese Patent JPH0284720

Kind Code:

A

Abstract:

PURPOSE: To easily enable the fine working such as the formation of a connection hole in an SiN film by sticking, on the SiN film surface, an intermediate film excellent in the adhesion with the SiN film and a resist film, and forming a resist pattern thereon.

CONSTITUTION: After a silicon nitride film 60 is formed, an intermediate film 80 excellent in the adhesion to the silicon nitride film and a resist film is stuck on the surface of the nitride film 60, a resist pattern 9 is formed on the intermediate film 80. For example, after the SiN film 60 of about 0.5μm thick is formed on a Cr film 41, an a Si layer 5, and the pattern of a Cr film 42, a-Si film 80 of 50-2000 thick is formed, and the resist film 9 is formed thereon. When photolithography is performed in this state, a fine pattern 6 of an SiN film is formed together with a pattern 8 of an a-Si film by SF6 cr CF4/O2 gas, which SiN film is excellent in the adhesion to the a Si-film 80 and the SiN film 60, and to the resist film 9 and the a-Si film 80. After that, a metal film is deposited, and a metal film pattern 7 is formed by a photolithography method.

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Inventors:

NISHIURA SHINJI

Application Number:

JP894588A

Publication Date:

March 26, 1990

Filing Date:

January 19, 1988

Export Citation:

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Assignee:

FUJI ELECTRIC CO LTD

International Classes:

H01L21/302; H01L21/28; H01L21/3065; H01L21/318; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/28; H01L21/302; H01L21/318; H01L21/336; H01L27/12; H01L29/784

Attorney, Agent or Firm:

Iwao Yamaguchi

Next Patent: JPH0284721