Title:
フォトマスク修正方法およびレーザ加工装置
Document Type and Number:
Japanese Patent JP5163967
Kind Code:
B2
Abstract:
The present invention enables correction of a photomask halftone pattern with very low transmittance. A CVD film is formed on a portion to be corrected of the halftone pattern of the photomask (2) using a source gas comprised of chrome carbonyl gas and an ultra-violet laser beam with an irradiation energy density per pulse of 40 mJ/cm2 or more, or an irradiation power density of 1 MW/cm2, emitted from a CVD processing laser oscillator (11) in which the Q-switch frequency is set within a range of 1 Hz to 1 kHz. The present invention can be applied to a laser processing device for correcting a photomask, for example.
Inventors:
Yosuke Kusumi
Takahiro Odashima
Takahiro Odashima
Application Number:
JP2010172888A
Publication Date:
March 13, 2013
Filing Date:
July 30, 2010
Export Citation:
Assignee:
OMRON Corporation
International Classes:
G03F1/72; G03F1/00; G03F1/32
Domestic Patent References:
| JP2009133904A | ||||
| JP2007232964A | ||||
| JP2002131888A | ||||
| JP10280152A | ||||
| JP8006233A | ||||
| JP4295851A | ||||
| JP2010210919A |
Attorney, Agent or Firm:
Yoshio Inamoto
Takashi Nishikawa
Takashi Nishikawa
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