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Patent Searching and Data


Title:
PHOTOMASK, METHOD FOR PRODUCING MASK PATTERN, AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006221078
Kind Code:
A
Abstract:

To finish exposure with one mask in an exposure to produce a fine dark line image using a photomask.

The photomask has a pair of light transmitting opening patterns 4 laid in parallel with each other in a substantially identical line width interposing a linear center light shielding portion 5, and a semi-transmitting region laid to interpose the pair of light transmitting opening patterns 4 in both sides in the width direction. The semi-transmitting region is a common-phase semi-transmitting portion 2 having a property of giving the same phase in the transmitting light as the phase of the light transmitting the light transmitting opening pattern 4. The semi-transmitting region is composed of patterns laid in a pitch as fine as not to be resolved by irradiation with light.


Inventors:
NAKAO SHUJI
Application Number:
JP2005036409A
Publication Date:
August 24, 2006
Filing Date:
February 14, 2005
Export Citation:
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Assignee:
RENESAS TECH CORP
International Classes:
G03F1/32; G03F1/36; G03F1/68; H01L21/027
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai