Title:
光反応性有機高分子ゲート絶縁膜組成物及びこれを利用した有機薄膜トランジスタ
Document Type and Number:
Japanese Patent JP5097644
Kind Code:
B2
Abstract:
Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
More Like This:
Inventors:
Kim Sung Hyun
Rin Santu
Kim gi hong
Yukuji Ho
Kim Taegon
Rin Santu
Kim gi hong
Yukuji Ho
Kim Taegon
Application Number:
JP2008211000A
Publication Date:
December 12, 2012
Filing Date:
August 19, 2008
Export Citation:
Assignee:
Electronics and Telecommunications Research Institute
International Classes:
H01L29/786; C08K5/103; C08L25/18; C08L29/04; C08L33/12; C08L39/06; H01L21/312; H01L51/05; H01L51/30
Domestic Patent References:
| JP2006028497A | ||||
| JP2000503053A | ||||
| JP2006295165A |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe