Title:
フォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4127941
Kind Code:
B2
Abstract:
The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.
Inventors:
Chung Zhao Chang
Root root Kei
Kim Ming-soo
Kin Toki
Kim Hidehide
White base ho
Kim Hidehide
Root root Kei
Kim Ming-soo
Kin Toki
Kim Hidehide
White base ho
Kim Hidehide
Application Number:
JP33865999A
Publication Date:
July 30, 2008
Filing Date:
November 29, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C43/303; G03F7/004; C07C47/277; H01L21/027; C08F16/20; C08F16/38; C08F22/06; C08F32/00; C08F116/38; C08F216/38; C08F220/26; C08K3/10; C08K5/00; C08L23/18; C08L29/14; C08L33/02; G03F7/00; G03F7/027; G03F7/033; G03F7/038; G03F7/039; C08L; H01L
Domestic Patent References:
| JP10231330A | ||||
| JP6001744A | ||||
| JP2000162772A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune