Title:
フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、及び、フォトレジストパターン形成方法
Document Type and Number:
Japanese Patent JP4067251
Kind Code:
B2
Abstract:
The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below:wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R' and R'' individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.
Inventors:
Lee Nemori
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
Application Number:
JP29565699A
Publication Date:
March 26, 2008
Filing Date:
October 18, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C62/34; C07C51/083; C08F32/08; C08F222/06; C08F232/02; C08L45/00; G03F7/039; G03F7/004
Domestic Patent References:
| JP10218947A | ||||
| JP10218941A | ||||
| JP10153864A | ||||
| JP1010739A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune