Title:
フォトレジスト用単量体とその製造方法、フォトレジスト用共重合体とその製造方法及びフォトレジスト組成物
Document Type and Number:
Japanese Patent JP4663075
Kind Code:
B2
Abstract:
The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula:where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
Inventors:
Root root Kei
Chung Zhao Chang
Lee Nemori
White base ho
Chung Zhao Chang
Lee Nemori
White base ho
Application Number:
JP2000246940A
Publication Date:
March 30, 2011
Filing Date:
August 16, 2000
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F232/00; C07B61/00; C07C41/56; C07C43/305; C08F2/06; C08F4/04; C08F4/34; C08F32/00; C08F222/06; C08F234/00; C08K5/00; C08K5/04; C08L45/00; G03F7/039; H01L21/027; G03F7/004
Domestic Patent References:
| JP2500750A | ||||
| JP2000508080A | ||||
| JP10254139A | ||||
| JP2000159717A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune