Title:
PHOTORESIST MONOMER AND ITS PRODUCTION, PRODUCTION OF PHOTORESIST POLYMER, AND FORMATION OF PHOTORESIST PATTERN
Document Type and Number:
Japanese Patent JP3794883
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a new photoresist compound having etching-resisting and adhesive properties suitable for lithography using far-ultraviolet light source.
SOLUTION: A compound of formula I [X is CH2, CH2CH2 or O; R1 is H or R'OH; R2 is H, OH, a 1-5C alkoxy, OR"OH or the like (R' and R" are each a 1-5C alkyl, a 3-8C cycloalkyl or the like)]. For example, a compound of formula II. The compound of formula I is obtained by reacting a compound of formula III with an alkyl compound having one or more hydroxyl groups (for example, methanol and diethylene glycol) in the presence of a base catalyst (for example, sodium hydride and potassium hydride) or an acid catalyst (for example, sulfuric acid and hydrochloric acid) in an organic solvent (for example, tetrahydrofuran and dimethylformamide). The compound of formula I is available as a monomer for synthesizing a photoresist resin, which can be applied to forming a high- dense fine pattern in a size of ≤0.157 μm, when processed using electron-beam, vacuum ultraviolet-(VUV) or X-ray.
Inventors:
Lee Nemori
Choi Akira
Kim Hidehide
Kim Hidehide
Chung Zhao Chang
Chung Min Ho
White base ho
Choi Akira
Kim Hidehide
Kim Hidehide
Chung Zhao Chang
Chung Min Ho
White base ho
Application Number:
JP30754499A
Publication Date:
July 12, 2006
Filing Date:
October 28, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C43/317; C07C41/16; C07C43/315; C07D307/00; C08F32/04; C08F34/02; G03F7/027; (IPC1-7): C07C43/317; C07C41/16; C07C43/315; C08F32/04; C08F34/02; G03F7/027
Domestic Patent References:
| JP9278699A | ||||
| JP60196755A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune