Title:
PHOTORESIST MONOMER, PHOTORESIST POLYMER, PRODUCTION METHOD OF PHOTORESIST POLYMER, PHOTORESIST COMPOSITION, FORMING METHOD OF PHOTORESIST PATTERN, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003040931
Kind Code:
A
Abstract:
To provide a photoresist monomer and a photoresist polymer, usable even in a light source of VUV (157 nm).
A photoresist monomer shown by formula (1), a polymer thereof and a photoresist composition using this polymer are provided. In the above formula, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are the same as defined in a specification.
Inventors:
LEE GEUN SU
JUNG JAE CHANG
SHIN KI SOO
JUNG JAE CHANG
SHIN KI SOO
Application Number:
JP2002122435A
Publication Date:
February 13, 2003
Filing Date:
April 24, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
C07C17/30; C07C23/38; C07D493/08; C07D495/08; C08F32/08; C08F34/02; C08F34/04; C08F220/18; C08F222/40; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F32/08; C07C23/38; C07D493/08; C07D495/08; C08F34/02; C08F34/04; C08F220/18; C08F222/40; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)