Title:
フォトレジストパターン形成方法
Document Type and Number:
Japanese Patent JP4665043
Kind Code:
B2
Abstract:
The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula:where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
Inventors:
Root root Kei
Chung Zhao Chang
Lee Nemori
White base ho
Chung Zhao Chang
Lee Nemori
White base ho
Application Number:
JP2009175421A
Publication Date:
April 06, 2011
Filing Date:
July 28, 2009
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07B61/00; G03F7/039; C07C41/56; C07C43/305; C08F2/06; C08F4/04; C08F4/34; C08F32/00; C08F222/06; C08F232/00; C08F234/00; C08K5/00; C08K5/04; C08L45/00; G03F7/38; H01L21/027; G03F7/004
Domestic Patent References:
| JP11102065A | ||||
| JP10316720A | ||||
| JP2001106738A | ||||
| JP2001089539A | ||||
| JP2000159717A | ||||
| JP2000122290A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune