Title:
PHOTORESIST POLYMER, METHOD OF MANUFACTURING PHOTORESIST POLYMER, POLYMER, PHOTORESIST COMPOSITION, METHOD OF FORMING PHOTORESIST PATTERN, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002047317
Kind Code:
A
Abstract:
To provide a photoresist composition with low absorbance at 193 nm and 157 nm.
The photoresist polymer shown in Formula (3) and the photoresist composition using the polymer are manufactured. The photoresist composition is effectively used for lithography using a light source of a far- ultraviolet range especially an ArF (193 nm) or VUV (157 nm) light source, because of being not only excellent in etching-resistance, thermostability and an adhesive property and capable of development with tetramethyl ammonium hydroxide(TMAH) in aqueous solution but also low in absorbance at 193 nm and 157 nm.
Inventors:
LEE GEUN SU
JUNG JAE CHANG
KIM HYEONG SOO
BAIK KI HO
JUNG MIN HO
JUNG JAE CHANG
KIM HYEONG SOO
BAIK KI HO
JUNG MIN HO
Application Number:
JP2001175530A
Publication Date:
February 12, 2002
Filing Date:
June 11, 2001
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
C08F8/02; C08F8/14; C08F32/00; C08F34/00; C08F222/06; C08F232/00; G03F7/031; G03F7/004; G03F7/032; G03F7/039; G03F7/38; H01L21/027; (IPC1-7): C08F32/00; C08F8/14; C08F34/00; G03F7/004; G03F7/039; G03F7/38; H01L21/027
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)