To provide a negative type photosensitive composition, which can form a silicon-containing thick resist film, superior in dry etching resistance in which a crack is hardly generated when the patterning is performed.
The negative type photosensitive composition includes [1] a polyorganosiloxane resin having an epoxy group and/or an oxetane group, a polyorganosiloxane resin having a hydroxy group, and an alkali-soluble polyorganosiloxane resin having a carboxyl group. [2] The method for forming a resist pattern includes a step for obtaining a resist film by applying the negative type photosensitive composition defined by [1] on a base material, a step for pattern-exposing the obtained resist film, and a step for forming a resist pattern by developing the resist film after the pattern-exposure and by dissolving and removing the unexposed resist film.
Toru Nakayama
Masayuki Enomoto