PURPOSE: To eliminate the moire interference in both vertical and horizontal directions and to obtain a solid state color image sensor of high resolution which is sensitive to light by providing polychromatic filters of a hexagonal shape in conformity with the electrodes of a hexagonal shape in the photosensitive layer of the color image sensor on a substrate.

CONSTITUTION: Each picture element is constituted of an MOS storage type transistor consisting of a source region 6, a drain region 7, a drain terminal 7', a gate terminal 6' and an insulation layer 12. A photosensitive layer 2 consisting of a photoconductive layer 9, a transparent upper electrode 9 and a bottom electrode 10 is formed thereon. Polychromatic filters 11 of a hexagnal shape are disposed on the layer 8. The electrodes 10 consisting of aluminum are formed into a hexagonal shape in conformity with the filters 11, and can eliminate moire patterns in both vertical and horizontal directions. Thus the solid state color image sensor of high resolution which is sensitive to light is obtained.