PHOTOSENSITIVE RESIN COMPOSITION FOR INTERLAYER INSULATION FILM OF SEMICONDUCTOR DEVICE, INTERLAYER INSULATION FILM USING THE SAME AND METHOD FOR MANUFACTURING INTERLAYER INSULATION FILM

Japanese Patent JP2008197160

A

To provide a photosensitive resin composition for an interlayer insulation film of a semiconductor device capable of ensuring adequate developability and enabling image to be formed with good resolution in a thick film while using a polyimide resin precursor, and enabling an interlayer insulation film excellent in flexibility to be formed.

The photosensitive resin composition for an interlayer insulation film of a semiconductor device comprises (A) an alkali-soluble polyamic acid having a structure represented by a general formula (1), (B) a photopolymerizable compound having a urethane bond and an ethylenically unsaturated group in a molecule, and (C) a photopolymerization initiator.

JP2018146963	PHOTOSENSITIVE COMPOSITION
JP6372599	Photosensitive resin composition for letterpress printing original plate and letterpress printing original plate using it
JP3006870	[Title of Invention] Fluorine-containing aromatic polyamide, its derivative, its production method, and its use.

KATO SADAAKI
MATSUZAKA OSAMU
TANIMOTO AKITOSHI

JP2007029450A

August 28, 2008

February 08, 2007

Click for automatic bibliography generation  

HITACHI CHEMICAL CO LTD

G03F7/037; C08F2/44; C08F299/06; C08G73/10; C08L79/08; G03F7/004; G03F7/027; H01L21/027

Yoshiki Hasegawa
Shiro Terasaki
Ryugo Akahori

Previous Patent: OPTICAL FILM BODY AND MANUFACTURING METHOD OF THE OPTICAL FILM BODY

Next Patent: INFRARED MICROSCOPE EQUIPPED WITH UP-CONVERSION PHOSPHOR