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Title:
PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2016105511
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To increase the photoelectric conversion efficiency in a photovoltaic device.SOLUTION: In a photovoltaic device, the interface between a semiconductor substrate 10 and an i-type amorphous layer 12i is a first oxidized interface containing oxygen of 1×10/cmor more, the interface between the semiconductor substrate 10 and an i-type amorphous layer 16i is a second oxidized interface containing oxygen of 1×10/cmor more; in the i-type amorphous layer 12i, a first high concentration oxygen area having an oxygen concentration ranging from not less than 1×10/cmto not more than 1×10/cmis provided in a region of 5 nm or less from the first oxidized interface, and in the i-type amorphous layer 16i, a second high concentration oxygen area having an oxygen concentration which ranges from not less than 1×10/cmto not more than 9×10/cmand is lower than that of the first high concentration oxygen area is provided in a region of 5 nm or less from the second oxidized interface.SELECTED DRAWING: Figure 2

Inventors:
YANO AYUMI
OGANE AKIYOSHI
Application Number:
JP2016038578A
Publication Date:
June 09, 2016
Filing Date:
March 01, 2016
Export Citation:
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Assignee:
PANASONIC IP MAN CORP
International Classes:
H01L31/0747
Domestic Patent References:
JP2008235400A2008-10-02
JP2003258287A2003-09-12
JP2002329878A2002-11-15
Other References:
T.MUELLER: "Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited", JOURNAL OF APPLIED PHYSICS, vol. Vol.107, No.1, 5 January 2010, JPN6015009462, pages 014504
H.FUJIWARA: "Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells", APPLIED PHYSICS LETTERS, vol. Vol.91, No.13, 26 September 2007, JPN6015009464, pages 133508
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office