Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JPS6384074
Kind Code:
A
Abstract:
PURPOSE:To prevent a diffusion under the state of a high temperature of a backplate constituent element by forming a semiconductor film by amorphous silicon and shaping an impurity layer on the side where the semiconductor film is brought into contact with a backplate in an n-type layer containing nitrogen of mean content of 1-20 atom %. CONSTITUTION:A semiconductor film 3 mainly comprising amorphous silicon irradiated with beams passing through a light-receiving surface electrode 2 is formed to a translucent and insulating glass substrate 1 through the light- receiving surface electrode 2 having a single layer or laminated structure consisting of a translucent conductive oxide, and a backplate 4 composed of a metal is shaped on the rear side of the film 3. The semiconductor film 3 is made up of an amorphous silicon carbide p-type layer 3p brought into contact with the light-receiving surface electrode 2 and functioning as a window layer, an amorphous silicon non-doped i-type layer 3i generating the optical carriers of electrons and holes when receiving the projection of beams, and an amorphous silicon nitride n-type layer 3n having nitrogen of mean content of 1-20 atom %.
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| JP2000058097 | CLEAN ENERGY CIRCULATION SYSTEM |
Inventors:
WATANABE KANEO
NAKAJIMA YUKIO
NAKAJIMA YUKIO
Application Number:
JP22879786A
Publication Date:
April 14, 1988
Filing Date:
September 26, 1986
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04; H01L31/06; H01L31/075; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS57136377A | 1982-08-23 |
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)