Title:
PHOTOVOLTAIC ELEMENT
Document Type and Number:
Japanese Patent JPS59132174
Kind Code:
A
Abstract:
PURPOSE:To reduce material costs, by forming an iron oxide thin film having the reverse conductive type with respect to a semiconductor substrate on a one conductive type semiconductor substrate. CONSTITUTION:A P type single crystal Si wafer is provided as a semiconductor substrate 32 on a metal substrate 31, which is to become a terminal electrode. An iron oxide thin film 33 is formed on the substrate 32 by a reactive cluster ion beam method. On the film 33, a comb shaped metal thin film 34 is provided so that the film 34 is connected to the film 33 electrically. When this photovoltaic element receives light from the side of the film 33, a positive photovoltaic power is generated on the side of the substrate 32. Since the transparent semiconductor film comprising the iron oxide is utilized, the element can be formed at a low cost.
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Inventors:
MORIMOTO KIYOSHI
TAKAGI TOSHINORI
TAKAGI TOSHINORI
Application Number:
JP588383A
Publication Date:
July 30, 1984
Filing Date:
January 19, 1983
Export Citation:
Assignee:
FUTABA DENSHI KOGYO KK
International Classes:
H01L31/032; H01L31/04; H01L31/072; H01L31/074; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5693376A | 1981-07-28 |
Attorney, Agent or Firm:
Norimitsu Nishimura
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