Title:
SUPERCONDUCTING BASE TRANSISTOR
Document Type and Number:
Japanese Patent JP3121940
Kind Code:
B2
Abstract:
PURPOSE: To improve the transmittance of quasi-particles by selecting a first superconductor among the material, whose energy gap is larger than a second superconducor.
CONSTITUTION: As a collector region, an SrTiO3 substrate 1, wherein Nb is doped, is used. A first base region 2a comprising a first superconductor is formed on the collector 1. A second base region 2b comprising a second superconductor is formed on the first base 2a. An emitter region 4 comprising metal or superconductor is formed on the second base region 2b through an insulating layer 21. The superconductor is selected so that the energy gap of the first superconductor becomes larger than the energy gap of the second superconductor. Thus, the height of the barrier between the collector and the base becomes low, and the transmittance of quasi-particles can be enhanced.
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Inventors:
Tatsuro Usuki
Seiji Suzuki
Hiroshi Suzuki
Yoshinobu Yoshisato
Seiji Suzuki
Hiroshi Suzuki
Yoshinobu Yoshisato
Application Number:
JP32490592A
Publication Date:
January 09, 2001
Filing Date:
November 09, 1992
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L39/22; (IPC1-7): H01L39/22
Domestic Patent References:
| JP61264769A | ||||
| JP1169980A | ||||
| JP2111081A | ||||
| JP62163379A |
Attorney, Agent or Firm:
Hiroshi Torii
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