Title:
PLANT FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR BUILDING THE SAME
Document Type and Number:
Japanese Patent JP2620037
Kind Code:
B2
Abstract:
PURPOSE: To quickly expand a semiconductor device manufacturing plant, having expandability where it can suitably cope with a production capacity having a low initial production phase and another production capacity, having a high final production phase at a low cost with the minimum disruption to the existing manufacturing line.
CONSTITUTION: On the production floor of a semiconductor device manufacturing plant, a working area composed of an axis area 22 and a plurality of tunnels 24 opened to the area 22 are provided, and manufacturing devices are installed in the tunnels 24 or other locations accessible from the insides of the tunnels 24 through walls. Each tunnel 25 is divided into two areas, by providing a temporary partition 28 in the tunnel 24, and the area nearer to the axis area 22 is used as an initial production area. In the initial production phase, manufacturing devices are installed only in this initial production area, and at the same time, the area is maintained in clean states. In the final production phase, the whole area in the tunnel 24 is used as a production area by removing or opening the partition, and at the same time, maintained in a clean state. In the initial production phase, all service pipelines are laid, but only required ones are installed for valve stands.
Inventors:
Chen Xinghai
Kohei So
Roh
Kohei So
Roh
Application Number:
JP25984693A
Publication Date:
June 11, 1997
Filing Date:
October 18, 1993
Export Citation:
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
International Classes:
E04H5/02; F24F3/16; H01L21/00; H01L21/02; H01L21/677; H05K13/00; (IPC1-7): E04H5/02; H01L21/02; H05K13/00
Domestic Patent References:
| JP63104924U |
Attorney, Agent or Firm:
Kyozo Yuasa (6 people outside)