Title:
プラズマＣＶＤ装置及びダイヤモンドの成長方法
Document Type and Number:
Japanese Patent JP6709491
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma CVD device enabling a diamond to grow at a higher speed.SOLUTION: A plasma CVD device comprises a substrate holder 20, on which a diamond substrate 30 is mounted, and causes a diamond to grow on the diamond substrate 30 by a CVD (Chemical Vapor Deposition Method) using a plasma to be produced by feeding micro waves directly to the substrate holder 20. The substrate holder 20 has a placing face 24a, on which the diamond substrate 30 is placed, at a portion where the upper face 30a of the diamond substrate 30 is positioned over the upper face 22 of the substrate holder 20.SELECTED DRAWING: Figure 2B
Inventors:
Norio Tokuda
Takao Inokuma
Baba
Shunsuke Watanabe
Daiki Kaneda
Osamu Ariyada
Takao Inokuma
Baba
Shunsuke Watanabe
Daiki Kaneda
Osamu Ariyada
Application Number:
JP2016046329A
Publication Date:
June 17, 2020
Filing Date:
March 09, 2016
Export Citation:
Assignee:
Kanazawa University
Arios Co., Ltd.
Arios Co., Ltd.
International Classes:
C30B29/04; C01B32/26; C23C16/27; C23C16/458; C23C16/511; C30B25/12
Domestic Patent References:
| JP2006083405A | ||||
| JP2007191362A |
Attorney, Agent or Firm:
Hiromori Arai