To obtain a plasma cleaning treatment method in which a residual C component, a residual Al component, a residual Ti component, a residual Si component or the like can be removed effectively by a method wherein the inside of an etching treatment chamber after an etching treatment is plasma- treated with H2O, a plasma treatment is executed with a gas which contains a chlorine component and a plasma treatment is executed additionally with oxygen gas.

A laminated structure film by a film on which a wiring pattern is formed, which uses an organic film and which contains A4 and by a barrier metal (TiW or TiN) is etched and treated with a mixed gas plasma of BCl3 and Cl2, and a reaction product is stuck to the inside of an etching treatment chamber. In order to remove the reaction product, the inside of the etching treatment chamber 6 is plasma-treated with H2O gas. Then, the inside of the etching treatment chamber 6 is plasma-treated with a gas which contains chlorine. After that, the inside of the etching treatment chamber 6 is plasma-treated additionally with O2 gas. Then, a plasma by a gas which is the same as that in an etching treatment for a next etching operation is generated, and the inside of the etching treatment chamber is replaced with an etching atmosphere.