PURPOSE: To vapor deposit amorphous silicon film uniformly on base body surfaces, by positioning plural cylindrical base bodies parallelly on the same plane as electrodes between a pair of parallel divided electrodes, and jetting raw material gas to gaps between the base bodies.

CONSTITUTION: Plural drums 15 fixed to a holding frame 6 are carried in a heating chamber 7 exhausted to vacuum and heated by heaters 4. The heated drums 15 are carried in a reaction chamber 2 held to vacuum by an exhausting system 5, through a gate valve 13, positioned, connected to an earth 10, to use them as anode electrode, and allowed to correspond to a pair of electrodes 22. The electrodes 22 are composed of each divided part 22A, and raw material gas is jetted from a supplying pipe 23 toward gaps between the drums 15 revolving in arrow direction through hole of each part 22A, decomposed in plasma to form amorphous silicon film on the drum 15 surface. Next, the drums 15 are cooled at a cooling chamber 3 and taken out. In this way, accumulated film having uniform thickness and quality is formed efficiently.