Title:
PLASMA CVD PROCESS FOR FORMING BPSG OF LOW-TEMPERATURE FLOW
Document Type and Number:
Japanese Patent JP2710551
Kind Code:
B2
Abstract:
PURPOSE: To enable a BPSG film to flow at low temperatures in a non-oxidizing atmosphere so as to be improved in resistance to defects by a method wherein silane and nitrous oxide are regulated in parameters such as a flow rate, a gas pressure and others in a plasma CVD deposition process, and P2O3 is contained in the BPSG film at a preferable P2O3/P2O5 ratio.
CONSTITUTION: A BPSG film 24 is deposited through a PECVD method in such a manner that the ratio of P2O3 to P2O5 contained in the film is deposited in the range of 0-25%. Then, the BPSG film 24 is subjected to an annealing treatment in a dry nitrogen atmosphere at a temperature of 900°C. The BPSG film 24a is eventually made not to flow in the above annealing treatment. Then, a contact opening 40 is formed in the BPSG film 24a through both photolithography and reactive ion etching. By this setup, a nearly vertical side wall 42a is obtained. Lastly, a wafer 18 is subjected to an annealing treatment in an oxygen atmosphere, and a sharply sloped BPSG layer is formed on the side wall of a contact hole by the flow of a BPSG film.
Inventors:
Mark Douglas Bowfard
William james king
Cheryl Murphy Martin
William james king
Cheryl Murphy Martin
Application Number:
JP5007394A
Publication Date:
February 10, 1998
Filing Date:
March 22, 1994
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
C23C16/50; C23C16/40; C23C16/56; H01L21/205; H01L21/31; H01L21/316; (IPC1-7): H01L21/316; C23C16/50; H01L21/31
Domestic Patent References:
| JP1318235A | ||||
| JP3120825A |
Attorney, Agent or Firm:
Kiyoshi Goda (2 outside)
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