Title:
PLASMA DOPING METHOD AND EQUIPMENT
Document Type and Number:
Japanese Patent JP2004128210
Kind Code:
A
Abstract:
To provide a plasma doping method and equipment, which are capable of carrying out low-concentration doping stably with high reproducibility.
A vacuum vessel 1 is exhausted with a pump 3 as the prescribed gas is introduced into the vacuum vessel 1 with a gas feed device 2. When a high-frequency power is applied to a coil 8 as the internal pressure of the vacuum vessel 1 is maintained at a prescribed value, a plasma is generated inside the vacuum vessel 1. Thereafter, the high-frequency power is gradually enhanced with gradual reduction in the internal pressure of the vacuum vessel 1, and a substrate 9 mounted on a specimen electrode 6 is subjected to low-concentration plasma doping.
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Inventors:
OKUMURA TOMOHIRO
NAKAYAMA ICHIRO
MIZUNO BUNJI
SASAKI YUICHIRO
NAKAYAMA ICHIRO
MIZUNO BUNJI
SASAKI YUICHIRO
Application Number:
JP2002290076A
Publication Date:
April 22, 2004
Filing Date:
October 02, 2002
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/22; H01L21/265; (IPC1-7): H01L21/22; H01L21/265
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito
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