PLASMA ETCHING

Japanese Patent JPH07263427

A

PURPOSE: To make it possible to perform an etching on recessed parts or opening parts formed in the rear of a substrate at high speed and to prevent damage from being inflicted on an element part formed on the surface of the substrate.

CONSTITUTION: Plasma P is generated by applying high-frequency power to reaction gas using the other surface of a semiconductor substrate 6, which has one surface thereof as an element part formation surface and has an insulating film 61 on said surface, as a surface to be etched and recessed parts or opening parts are formed by etching in the surface to be etched. The substrate 6 is arranged on an electrode 5 formed as a grounding potential electrode in such a way that the film 6 is positioned on the lower side of the substrate 6 and a conductive member 7 formed as a grounding potential member is arranged on the periphery of the substrate 6. When one end of the member 7 is brought into contact to the surface on the side of the surface to be etched of the substrate 6, charge, which is generated in the surface of the substrate 6, is moved to the member 7 and a potential in the substrate is reduced.

YOSHIDA TAKAHIKO
ASAUMI KAZUSHI
YORINAGA MUNEO
FUKADA TAKESHI

JP7938494A

October 13, 1995

March 25, 1994

Click for automatic bibliography generation  

NIPPON SOKEN
NIPPON DENSO CO

H05H1/46; C23C14/40; C23F4/00; H01J37/32; H01L21/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23C14/40; C23F4/00; H05H1/46

Ito Juma

Previous Patent: obesity inhibitor

Next Patent: Vehicle sensation measurement evaluation method, device, electronic device, storage medium and compu...