Title:
PLASMA GENERATING METHOD AND PLASMA TREATING DEVICE
Document Type and Number:
Japanese Patent JP3874969
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent degassing from a cryopanel by making exhaust conductance large between a vacuum chamber and a cryopump before shut off of a second gas after the second gas is introduced into the vacuum chamber, and making the exhaust conductance small after plasma discharge is conducted within the vacuum chamber.
SOLUTION: Argon gas is introduced into a chamber 8 through a mass flow controller 6. At a point of time when the degree of vacuum in the chamber 8 is stabilized, an orifice valve 15 is set to large exhaust conductance. The degree of vacuum in the chamber 8 is made about 1-5×10-2 Torr to conduct plasma discharge. The degree of vacuum in the chamber 8 becomes the degree of vacuum showing before an almost instant gas introduction shut off valve 13 is opened, and in the stabilized sate, the orifice valve 15 is returned to the position of small exhaust conductance. While stable plasma discharge is kept, the degree of vacuum is stabilized at about 4×10-2 Torr. The temperature rising of a cryopanel while plasma discharge is conducted is suppressed to about 1 K.
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Inventors:
Yokoyama Masahide
Toshiyuki Suemitsu
Katsuyuki Kita
Koji Imamura
Toshiyuki Suemitsu
Katsuyuki Kita
Koji Imamura
Application Number:
JP21061299A
Publication Date:
January 31, 2007
Filing Date:
July 26, 1999
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/31; H05H1/46; C23C14/34; C23C16/50; H01L21/203; (IPC1-7): H05H1/46; C23C14/34; C23C16/50; H01L21/203; H01L21/31
Domestic Patent References:
| JP58093873A |
Attorney, Agent or Firm:
Aoyama Aoi
Takuji Yamada
Takuji Yamada