PLASMA GENERATION APPARATUS

Japanese Patent JPH02194526

A

PURPOSE: To prevent a mask and a part under a layer to be etched from being damaged and to make an etching speed fast by a method wherein a high-frequency plasma is generated between an anode electrode and a main electrode part, a direct-current plasma is generated between a peripheral electrode part and a cathode electrode and electrons of the direct-current plasma are supplied, as auxiliary electrons, to a cathode fall region of the main electrode part through a hole.

CONSTITUTION: A high-frequency power supply 1 which can control output electric power is connected, via a capacitor 8, to a high-frequency cathode electrode 28; a direct-current power supply 20 which can control output electric power is connected, via a resistance 21, to a direct-current cathode so as to be superposed on a high-frequency voltage; a high-frequency plasma is generated between an anode electrode 27 and the high-frequency cathode electrode 28; a direct-current plasma is generated between the high-frequency cathode electrode 28 and a direct-current cathode electrode 31. In addition, auxiliary electrons are supplied to the side of the high-frequency plasma through a slit hole 30 from the direct-current plasma; a sheath-voltage is controlled. Thereby, it is possible to freely control a plasma density while high-frequency electric current is controlled and a cathode sheath voltage is maintained in a desired state.

SUGAWARA MINORU
NAITO TAKESHI
ABE MASATOSHI

JP1351989A

August 01, 1990

January 23, 1989

Click for automatic bibliography generation  

SUGAWARA MINORU
KOKUSAI ELECTRIC CO LTD

H05H1/46; C23C16/50; C23F4/00; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): C23C16/50; C23F4/00; H01L21/205; H01L21/302; H01L21/31; H05H1/46

JPS612328A	1986-01-08
JPS60195939A	1985-10-04

Miyoshi Shoji

Previous Patent: METHOD OF FERMING LOW RESISTANCE CONNECTION AT LOW RESISTANCE AREA OF VLSI DEVICE

Next Patent: REMOVAL OF FILM