Title:
PLASMA PROCESSING APPARATUS AND METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2002231702
Kind Code:
A
Abstract:
To provide a dry etching apparatus which is improved so as to increase etching rate and uniformity of a shape.
A substrate holder 8 which retains a substrate 9 from below is disposed in a processing chamber 2. This apparatus is provided with a high frequency wave introducing means 3 for introducing high frequency wave into the processing chamber 2, a discharge means 20 for discharging atmosphere in the processing chamber 2, and a process gas introducing means 12 for introducing process gas into the processing chamber 2. The apparatus is further provided with a substrate cooling means 15 which cools the substrate 9 by using argon.
Inventors:
YAMAMOTO NAOKO
YAMAMOTO TATSUSHI
HIRAYAMA MASAKI
OMI TADAHIRO
YAMAMOTO TATSUSHI
HIRAYAMA MASAKI
OMI TADAHIRO
Application Number:
JP2001030352A
Publication Date:
August 16, 2002
Filing Date:
February 07, 2001
Export Citation:
Assignee:
SHARP KK
OMI TADAHIRO
OMI TADAHIRO
International Classes:
H05H1/46; B01J19/08; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; B01J19/08; H05H1/46
Attorney, Agent or Firm:
Fukami Hisaro
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