Title:
プラズマ処理装置および処理方法
Document Type and Number:
Japanese Patent JP4944198
Kind Code:
B2
Abstract:
A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.
Inventors:
Masaki Hirayama
Tadahiro Ohmi
Takahiro Horiguchi
Tadahiro Ohmi
Takahiro Horiguchi
Application Number:
JP2009519277A
Publication Date:
May 30, 2012
Filing Date:
June 11, 2008
Export Citation:
Assignee:
東京エレクトロン株式会社
国立大学法人東北大学
国立大学法人東北大学
International Classes:
H05H1/46; C23C16/511; H01L21/205; H01L21/3065
Domestic Patent References:
| JPH10158847A | 1998-06-16 | |||
| JP2003133232A | 2003-05-09 | |||
| JP2002355550A | 2002-12-10 | |||
| JP2001284331A | 2001-10-12 | |||
| JP2002170818A | 2002-06-14 |
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Miaki Kametani
Tetsuo Kanamoto
Miaki Kametani