Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2023119621
Kind Code:
A
Abstract:
To improve uniformity of plasma processing while at the same time suppressing generation of particles.SOLUTION: A plasma processing device comprises a chamber, a dielectric window, an antenna, and an electric power supply unit. The antenna is installed upward of the chamber via the dielectric window, and is formed in a linear shape from an electro-conductive material. The antenna is constructed such that a first end, which is one end of the antenna, is left open, and a second end, which is the other end of the antenna, is grounded to earth, and such that RF electric power is supplied from the electric power supply unit to the vicinity of the second end, causing the antenna to resonate in a wavelength that is 1/4 the RF wave electric power supplied from the electric power supply unit. Furthermore, the antenna includes a first portion which is a portion of the antenna closer to the first end side than a first position that is apart by a first distance from the first end toward the second end, and a second portion which is a portion of the antenna from the first position to the second end. A distance between the first portion and an underside of the dielectric window is longer than a distance between the second portion and the underside of the dielectric window.SELECTED DRAWING: Figure 2
Inventors:
SAITO TAKENAO
FUJIWARA NAOKI
UMEZAWA YOSHIHIRO
FUJIWARA NAOKI
UMEZAWA YOSHIHIRO
Application Number:
JP2022022565A
Publication Date:
August 29, 2023
Filing Date:
February 17, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H05H1/46; H01L21/3065
Attorney, Agent or Firm:
Sakai International Patent Office
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